• DocumentCode
    1124082
  • Title

    YBCO Film With Sm Addition Using Low-Fluorine TFA-MOD Approach

  • Author

    Shi, Dongqi ; Wang, Lin ; Kim, Jung Ho ; Zhu, Xuebin ; Liu, Min ; Li, Qi ; Zeng, Rong ; Ahn, Jyhuan ; Dou, S.X. ; Yoo, J. ; Kim, Y.K. ; Yamashita, T. ; Barry, John ; Taylor, Richard

  • Author_Institution
    Inst. of Supercond. & Electron. Mater. (ISEM), Univ. of Wollongong, Wollongong, NSW, Australia
  • Volume
    19
  • Issue
    3
  • fYear
    2009
  • fDate
    6/1/2009 12:00:00 AM
  • Firstpage
    3208
  • Lastpage
    3211
  • Abstract
    Yttrium barium copper oxide (YBCO) film was synthesized by a metal-organic deposition (MOD) process with fluorine-free Y and Cu precursor. The precursor solution with Sm addition enabled further improvement of the thickness and uniformity of precursor films. The calcination and firing processes were studied, and the precursor film was successfully converted to dense and uniform YBCO film on LaAlO3 (LAO) substrate after annealing in a wet Ar and O2 atmosphere. The measured critical current density (J c) value was about 80 A/cm-w (2.66 MA/cm2). The trifluoroacetate (TFA) reduced MOD process has the advantage that it has a larger tolerance for variations in the gas flow rate and path. The results on a Sm-YBCO film deposited on LAO with a CeO2 buffer layer fabricated by MOD are also presented.
  • Keywords
    annealing; barium compounds; buffer layers; calcination; critical current density (superconductivity); firing (materials); high-temperature superconductors; liquid phase deposition; samarium; superconducting thin films; yttrium compounds; LAO substrate; LaAlO3; MOD process; Sm-YBa2Cu3O7; annealing; buffer layer; calcination; critical current density; firing process; fluorine-free Cu precursor; fluorine-free Y precursor; gas flow rate; metal-organic deposition process; trifluoroacetate; yttrium barium copper oxide film synthesis; Coated conductor; MOD; YBCO film; fluorine;
  • fLanguage
    English
  • Journal_Title
    Applied Superconductivity, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1051-8223
  • Type

    jour

  • DOI
    10.1109/TASC.2009.2019211
  • Filename
    5153226