• DocumentCode
    1124088
  • Title

    Quantum efficiency of electron-beam pumped GaAs lasers

  • Author

    Lavine, J.

  • Author_Institution
    Raytheon Research Div., Waltham, MA, USA
  • Volume
    3
  • Issue
    11
  • fYear
    1967
  • fDate
    11/1/1967 12:00:00 AM
  • Firstpage
    641
  • Lastpage
    642
  • Abstract
    Measurements of differential external quantum efficiency as high as 66 percent have been observed at 77°K in an electron-beam pumped GaAs laser doped at 2 \\times 10^{18} /cm3with Sn. Peak-power output of the order of 20 watts has been obtained at both 4.2° and 77°K.
  • Keywords
    Doping; Fluorescence; Gallium arsenide; Laser beams; Laser excitation; Power generation; Pump lasers; Semiconductor lasers; Threshold current; Voltage;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.1967.1074396
  • Filename
    1074396
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1124088