• DocumentCode
    1124215
  • Title

    Microwave frequency interconnection line model of a wafer level package

  • Author

    Lee, Junwoo ; Ryu, Woonghwan ; Kim, Jingook ; Lee, Junho ; Kim, Namhoon ; Pak, Junso ; Kim, Jae-Myun ; Kim, Joungho

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., Korea Adv. Inst. of Sci. & Technol., Daejeon, South Korea
  • Volume
    25
  • Issue
    3
  • fYear
    2002
  • fDate
    8/1/2002 12:00:00 AM
  • Firstpage
    356
  • Lastpage
    364
  • Abstract
    In this paper, we introduce the microwave transmission characteristics of interconnection lines on a wafer level package (WLP) and also propose a precise microwave-frequency model of the WLP interconnections. The slow wave factor (SWF) and attenuation constant are measured and discussed. High-frequency measurement is described, based on two-port S-parameter measurements, using an on-wafer microwave probe with a frequency range of up to 5 GHz. The extracted model is represented in the form of distributed lumped circuit model elements and can be easily merged into SPICE simulations. From the extracted model, it was found that line capacitance and inductance per unit length are 0.110 pF/mm and 0.286 nH/mm, respectively. We have successfully applied the extracted model to the design and analysis of a Rambus memory module for time domain simulation and signal integrity simulation. From the simulation, it was found that the WLP has better high-frequency performance, because of its low package inductance, compared with the μBGA package, but longer propagation delay, because of the relatively high package capacitance.
  • Keywords
    DRAM chips; S-parameters; SPICE; capacitance; circuit simulation; delays; inductance; integrated circuit interconnections; integrated circuit measurement; integrated circuit modelling; integrated circuit packaging; microwave measurement; time-domain analysis; 0 to 5 GHz; DRAM; Rambus memory module; SPICE simulations; WLP interconnections; attenuation constant; distributed lumped circuit model elements; high-frequency measurement; inductance per unit length; interconnection line model; line capacitance; microwave transmission characteristics; microwave-frequency model; on-wafer microwave probe; package inductance; propagation delay; signal integrity simulation; slow wave factor; time domain simulation; two-port S-parameter measurements; wafer level package; Analytical models; Capacitance; Frequency measurement; Inductance; Integrated circuit interconnections; Microwave frequencies; Microwave measurements; Packaging; Semiconductor device modeling; Wafer scale integration;
  • fLanguage
    English
  • Journal_Title
    Advanced Packaging, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1521-3323
  • Type

    jour

  • DOI
    10.1109/TADVP.2002.805317
  • Filename
    1166571