Title :
Direct experimental verification of shot noise in short channel MOS transistors
Author :
Andersson, S. ; Svensson, C.
Author_Institution :
Dept. of Electr. Eng., Linkoping Univ., Sweden
fDate :
7/21/2005 12:00:00 AM
Abstract :
Drain noise current was measured at an extended temperature range on n-MOS transistors of various lengths made in a 0.18 μm process. A comparison with theoretical noise models strongly indicates the mechanism of shot noise produced near the source by diffusion currents, as proposed by Obrecht et al.
Keywords :
MOSFET; semiconductor device models; semiconductor device noise; shot noise; 0.18 micron; diffusion currents; drain noise current; n-MOS transistors; short channel MOS transistors; shot noise; theoretical noise models;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20051474
