Title :
Laser diodes made from dislocation-free GaAs showing a homogeneous near-field pattern
Author_Institution :
Univ. of Berne, Berne, Switzerland
fDate :
11/1/1967 12:00:00 AM
Keywords :
Atom lasers; Atomic beams; Atomic measurements; Diode lasers; Gallium arsenide; Mirrors; Near-field radiation pattern; Optical materials; P-n junctions; Threshold current;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.1967.1074414
