DocumentCode :
1124275
Title :
Properties of graphene produced by the high pressure-high temperature growth process
Author :
Parvizi, F. ; Teweldebrhan, D. ; Ghosh, S. ; Calizo, I. ; Balandin, A.A. ; Zhu, H. ; Abbaschian, R.
Author_Institution :
Dept. of Electr. Eng., Univ. of California Riverside, Riverside, CA
Volume :
3
Issue :
1
fYear :
2008
fDate :
3/1/2008 12:00:00 AM
Firstpage :
29
Lastpage :
34
Abstract :
The authors report on a new method for the synthesis of graphene, a mono-layer of carbon atoms arranged in a honey comb lattice, and the assessment of the properties of obtained graphene layers using micro-Raman characterisation. Graphene was produced by a high pressure-high temperature (HPHT) growth process from the natural graphitic source material by utilising the molten Fe-Ni catalysts for dissolution of carbon. The resulting large-area graphene flakes were transferred to the silicon-silicon oxide substrates for the spectroscopic micro-Raman and scanning electron microscopy inspection. The analysis of the G peak, D, T + D and 2D bands in the Raman spectra under the 488 nm laser excitation indicate that the HPHT technique is capable of producing high-quality large-area single-layer graphene with a low defect density. The disorder-induced D peak ~1359 cm-1 while very strong in the initial graphitic material is completely absent in the graphene layers. The proposed method may lead to a more reliable graphene synthesis and facilitate its purification and chemical doping.
Keywords :
Raman spectra; carbon; high-pressure effects; high-temperature effects; honeycomb structures; materials preparation; monolayers; scanning electron microscopy; C; G peak; Raman spectra; carbon atoms; carbon dissolution; disorder-induced D peak; graphene; high pressure-high temperature growth process; honeycomb lattice; initial graphitic material; micro-Raman characterisation; molten Fe-Ni catalysts; monolayer; scanning electron microscopy; silicon-silicon oxide substrates; wavelength 488 nm;
fLanguage :
English
Journal_Title :
Micro & Nano Letters, IET
Publisher :
iet
ISSN :
1750-0443
Type :
jour
DOI :
10.1049/mnl:20070074
Filename :
4483852
Link To Document :
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