DocumentCode
112430
Title
Interview
Author
Jang, Jin
Volume
50
Issue
21
fYear
2014
fDate
October 9 2014
Firstpage
1490
Lastpage
1490
Abstract
Prof. Jaehyung Jang of the Gwangju Institute of Science and Technology, Korea, talks about the signifi cance of the paper `Effects of nitrogen fl ow rate in ohmic contacts on InAlN/ GaN heterostructures??, page 1545.
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el.2014.3465
Filename
6926951
Link To Document