DocumentCode :
112430
Title :
Interview
Author :
Jang, Jin
Volume :
50
Issue :
21
fYear :
2014
fDate :
October 9 2014
Firstpage :
1490
Lastpage :
1490
Abstract :
Prof. Jaehyung Jang of the Gwangju Institute of Science and Technology, Korea, talks about the signifi cance of the paper `Effects of nitrogen fl ow rate in ohmic contacts on InAlN/ GaN heterostructures??, page 1545.
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el.2014.3465
Filename :
6926951
Link To Document :
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