DocumentCode :
1124318
Title :
Passive photonic components using inp optical wire technology
Author :
Lesecq, M. ; Maricot, S. ; Vilcot, J.P. ; Beaugeois, M.
Author_Institution :
Inst. d´´Electron., de Microelectron. et de Nanotechnol., Univ. des Sci. et Technol. de Lille, Villeneuve d´´Ascq
Volume :
2
Issue :
2
fYear :
2008
fDate :
4/1/2008 12:00:00 AM
Firstpage :
69
Lastpage :
75
Abstract :
The authors present the design, fabrication and characterisation of passive photonic components using InP optical wire technology. These components are straight and curved waveguides as well as Y-junctions. Their ultimate use is to be integrated within active nanophotonic functions and this is implicitly targeted in the different parts of this process work. First, propagation and excess losses because of a bend or Y-junction are modelled using a beam propagation method or a finite difference time domain method. Then, the technological process used to fabricate these components is presented; it is mainly based on e-beam direct writing and inductively coupled plasma deep etching. Finally, the different losses are measured and results are compared with the theory. The authors demonstrate, thus, that the use of submicron waveguides (or optical wire) can lead to very compact optical passive functions on InP since very small radius bends and wide angle Y-junctions showed almost low excess loss.
Keywords :
III-V semiconductors; finite difference time-domain analysis; indium compounds; integrated optics; optical waveguides; InP; Y-junctions; active nanophotonic functions; beam propagation method; bend junction; curved waveguides; e-beam direct writing; finite difference time domain method; inductively coupled plasma deep etching; optical passive functions; optical wire technology; passive photonic components; straight waveguides; submicron waveguides;
fLanguage :
English
Journal_Title :
Optoelectronics, IET
Publisher :
iet
ISSN :
1751-8768
Type :
jour
DOI :
10.1049/iet-opt:20060104
Filename :
4483858
Link To Document :
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