Title :
Effects of operating temperature on electrical parameters in an analog process
Author :
Cheng, Stephen ; Manos, Pete
Author_Institution :
Motorola, Austin, TX, USA
fDate :
7/1/1989 12:00:00 AM
Abstract :
The variation of basic MOS device properties with operating temperature is examined. These devices include both n-channel and p-channel transistors, resistors, junction diodes, and precision capacitors. The theory of such variations is briefly examined, and fits to empirical expressions are graphically derived. Implications of such variations are briefly explored.<>
Keywords :
insulated gate field effect transistors; metal-insulator-semiconductor devices; semiconductor diodes; MOS device properties; analog process; electrical parameters; empirical expressions; junction diodes; n-channel transistors; operating temperature; p-channel transistors; precision capacitors; resistors; Aging; Analog circuits; Capacitors; Design optimization; Digital integrated circuits; Diodes; Humidity; Resistors; Temperature distribution; Threshold voltage;
Journal_Title :
Circuits and Devices Magazine, IEEE
