DocumentCode
1124370
Title
Effects of operating temperature on electrical parameters in an analog process
Author
Cheng, Stephen ; Manos, Pete
Author_Institution
Motorola, Austin, TX, USA
Volume
5
Issue
4
fYear
1989
fDate
7/1/1989 12:00:00 AM
Firstpage
31
Lastpage
38
Abstract
The variation of basic MOS device properties with operating temperature is examined. These devices include both n-channel and p-channel transistors, resistors, junction diodes, and precision capacitors. The theory of such variations is briefly examined, and fits to empirical expressions are graphically derived. Implications of such variations are briefly explored.<>
Keywords
insulated gate field effect transistors; metal-insulator-semiconductor devices; semiconductor diodes; MOS device properties; analog process; electrical parameters; empirical expressions; junction diodes; n-channel transistors; operating temperature; p-channel transistors; precision capacitors; resistors; Aging; Analog circuits; Capacitors; Design optimization; Digital integrated circuits; Diodes; Humidity; Resistors; Temperature distribution; Threshold voltage;
fLanguage
English
Journal_Title
Circuits and Devices Magazine, IEEE
Publisher
ieee
ISSN
8755-3996
Type
jour
DOI
10.1109/101.29900
Filename
29900
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