Title :
Measurement of the static and dynamic linewidth enhancement factor in strained 1.55 μm InGaAsP lasers
Author :
Summers, Huw D. ; White, Ian H.
Author_Institution :
Sch. of Phys., Bath Univ.
fDate :
7/7/1994 12:00:00 AM
Abstract :
The linewidth enhancement factor, α, has been measured in unstrained and 1% compressively strained InGaAsP lasers operating under both static and dynamic conditions. Values of 4±0.5 for the unstrained lasers and 2.1±0.5 for the strained devices are found under DC conditions. The a-value for the strained lasers measured under dynamic conditions is 2.4±0.6
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser variables measurement; semiconductor lasers; semiconductor quantum wells; spectral line breadth; 1.55 mum; DC; Fabry-Perot laser; InGaAsP; InGaAsP lasers; a-value; compressively strained lasers; dynamic linewidth enhancement factor; laser measurement; semiconductor lasers; static linewidth enhancement factor;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19940761
