Title :
Wide-bandwidth distributed Bragg reflectors using oxide/GaAs multilayers
Author :
MacDougal, M.H. ; Zhao, Hang ; Dapkus, P.D. ; Ziari, Mehrdad ; Steier, W.H.
Author_Institution :
Dept. of Electr. Eng.-Electrophys., Univ. of Southern California, Los Angeles, CA
fDate :
7/7/1994 12:00:00 AM
Abstract :
The authors have designed and fabricated a wide bandwidth high reflectivity distributed Bragg reflector (DBR) using the native oxide of AlAs as the low refractive index layer and GaAs as the high refractive index layer. Results show that the refractive index of the native oxide is 1.55±0.01, the peak reflectivity of the DBR is over 99%, and the reflectivity bandwidth is ~460 nm
Keywords :
III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; gallium arsenide; reflectivity; refractive index; semiconductor lasers; AlAs oxide/GaAs multilayers; AlAs-GaAs; DBR; bandwidth; distributed Bragg reflectors; high refractive index layer; low refractive index layer; native oxide; peak reflectivity; reflectivity; reflectivity bandwidth;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19940754
