Title :
Via etching through extremely thick organic dielectrics
Author :
Zeafla, Laura L.
Author_Institution :
SAIC, Hanover, MD, USA
Abstract :
A process for etching vias in extremely thick (85 to 152 μm) HD MicroSystems polyimide PI2611 was developed using commercial reactive ion etching tools. Sloped via profiles were obtained using a combination of hard masks made of aluminum and silicon dioxide thin films, combined with reactive ion etch steps in pure O2 and O2/CF4. The deep via profiles provided good step coverage. These vias, coated with a 3-μm-thick copper film, produced satisfactory electrical continuity between layers of package interconnects. The process is reproducible, reliable, and, hence, practically useful for fabricating a small number of parts in spite of extended etch periods.
Keywords :
VLSI; dielectric thin films; etching; integrated circuit interconnections; integrated circuit packaging; multichip modules; organic compounds; system-on-chip; 3 micron; 3D packaging dielectric; 85 to 152 micron; HD MicroSystems polyimide PI2611; VLSI; aluminum thin films; copper film; deep via profiles; electrical continuity; hard masks; multichip modules; package interconnects; plasma etch; reactive ion etching tools; silicon dioxide thin films; sloped via profiles; system on chip; system on package; thick organic dielectrics; via etching; Aluminum; Dielectric substrates; Dielectric thin films; Etching; Integrated circuit interconnections; Multichip modules; Packaging; Plasma applications; Polyimides; Silicon compounds; Etch; MCM; SoC; SoP; VLSI; interconnect; multichip modules; plasma etch; polyimide; system on chip; system on package; three-dimensional packaging dielectric; via;
Journal_Title :
Advanced Packaging, IEEE Transactions on
DOI :
10.1109/TADVP.2004.831859
