Title :
High-brightness green light-emitting diodes
Author :
Eason, D.B. ; Hughes, W.C. ; Ren, Jinchang ; Yu, Zhiqiang ; Cook, J.W. ; Schetzina, J.F. ; Cantwell, G. ; Harsch, W.C.
Author_Institution :
Dept. of Phys., North Carolina State Univ., Raleigh, NC
fDate :
7/7/1994 12:00:00 AM
Abstract :
II-VI heterostructures composed of ZnSe-ZnTeSe layers have been employed to develop high-brightness green light-emitting diodes operating at peak wavelengths in the pure green spectral region (508-514 nm). The brightest devices produce 792 μW (10 mA, 4V) peaked at 510 nm. This corresponds to an external efficiency of 2% and a luminous performance of 8.0 lumen/W
Keywords :
II-VI semiconductors; light emitting diodes; zinc compounds; 10 mA; 2 percent; 4 V; 508 to 514 nm; 792 muW; II-VI heterostructures; ZnSe-ZnTeSe; green LED; high-brightness LED; light-emitting diodes;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19940766
