Title :
Charge trapping and polarity dependence of interface state generation in nitrided oxide gate dielectric by electron photoinjection
Author :
Yuan, X.-J. ; Marsland, J.S. ; Eccleston, W. ; Bouvet, D. ; Mi, Junping ; Dutoit, M.
Author_Institution :
Dept. of Electr. Eng. & Electron., Liverpool Univ.
fDate :
7/7/1994 12:00:00 AM
Abstract :
The polarity dependence of interface state (Du) generation in NH3-nitrided oxide MOS capacitors has been studied by the internal photoemission (IPE) electron injection technique. A greater Du(mg) generation rate has be found for IPE electron injection from the Si substrate than from the Al gate at low injection fluence <1016 electron/cm2. The positive charge generation has also been observed during IPE electron injection from Si substrate. The high frequency C-V and photo-IV measurements indicate that the location of generated positive charge is near the Si/nitrided oxide interface
Keywords :
capacitors; hole traps; interface electron states; metal-insulator-semiconductor devices; nitridation; photoemission; semiconductor device testing; Al gate; IPE electron injection; MOS capacitors; NH3; NH3-nitrided oxide MOS capacitors; Si; Si substrate; Si-SiON; Si/nitrided oxide interface; charge trapping; electron photoinjection; generation rate; high frequency C-V measurements; interface state generation; internal photoemission electron injection technique; low injection fluence; nitrided oxide gate dielectric; photo-IV measurements; polarity dependence; positive charge generation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19940748
