Title :
Electroluminescence from InGaAs/InAlAs HEMTs
Author :
Woodhead, J. ; Reddy, Monika ; David, J.P.R.
Author_Institution :
Dept. of Electron. & Electr. Eng., Sheffield Univ.
fDate :
7/7/1994 12:00:00 AM
Abstract :
Electroluminescence has been observed from InGaAs/lnAlAs HEMTs under low bias conditions confirming the presence of holes caused by impact ionisation. The field required for the onset of electroluminescence and the kink effect are similar, suggesting that the kink effect is associated with impact ionisation
Keywords :
III-V semiconductors; aluminium compounds; electroluminescence; gallium arsenide; high electron mobility transistors; impact ionisation; indium compounds; semiconductor device noise; InGaAs-InAlAs; InGaAs/InAlAs HEMTs; electroluminescence; holes; impact ionisation; kink effect; low bias conditions;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19940775
