• DocumentCode
    1124968
  • Title

    Gunn effect in heterojunction bipolar transistors

  • Author

    Posse, V.A. ; Jalali, Bahram

  • Author_Institution
    Dept. of Electr. Eng., California Univ., Los Angeles, CA
  • Volume
    30
  • Issue
    14
  • fYear
    1994
  • fDate
    7/7/1994 12:00:00 AM
  • Firstpage
    1183
  • Lastpage
    1184
  • Abstract
    The Gunn effect in III-V heterojunction bipolar transistors is investigated using hydrodynamic simulations. It is shown that Gunn domains nucleate and propagate in the collector drift region of an npn AlGaAs-GaAs transistor in which the electric field at the base-collector space charge region is properly engineered
  • Keywords
    Gunn effect; III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; semiconductor device models; simulation; space charge; AlGaAs-GaAs; Gunn domains; Gunn effect; III-V HBT; base-collector space charge region; collector drift region; electric field; heterojunction bipolar transistors; hydrodynamic simulations; n-p-n transistor;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19940794
  • Filename
    299381
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1124968