Title :
Gunn effect in heterojunction bipolar transistors
Author :
Posse, V.A. ; Jalali, Bahram
Author_Institution :
Dept. of Electr. Eng., California Univ., Los Angeles, CA
fDate :
7/7/1994 12:00:00 AM
Abstract :
The Gunn effect in III-V heterojunction bipolar transistors is investigated using hydrodynamic simulations. It is shown that Gunn domains nucleate and propagate in the collector drift region of an npn AlGaAs-GaAs transistor in which the electric field at the base-collector space charge region is properly engineered
Keywords :
Gunn effect; III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; semiconductor device models; simulation; space charge; AlGaAs-GaAs; Gunn domains; Gunn effect; III-V HBT; base-collector space charge region; collector drift region; electric field; heterojunction bipolar transistors; hydrodynamic simulations; n-p-n transistor;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19940794
