DocumentCode :
1124976
Title :
Laser annealed W/Sn contacts on N-type GaAs
Author :
Machac, Pavel ; Myslik, V. ; Vrnata, M.
Author_Institution :
Dept. of Solid-State Eng., Inst. of Chem. Technol., Prague
Volume :
30
Issue :
14
fYear :
1994
fDate :
7/7/1994 12:00:00 AM
Firstpage :
1185
Lastpage :
1187
Abstract :
The authors deal with the preparation of W/Sn/GaAs and W/Sn/Pd/GaAs contact structures. The metal layers were deposited by the sputtering method and annealing was carried out using an Nd:YAG pulsed laser. Better quality was achieved using contact structures containing palladium. The best measured contact resistance were ~2.1×10-6 Ω cm2
Keywords :
III-V semiconductors; contact resistance; gallium arsenide; laser beam annealing; ohmic contacts; palladium; semiconductor-metal boundaries; sputter deposition; sputtered coatings; tin; tungsten; Nd:YAG pulsed laser; W-Sn-GaAs; W-Sn-Pd-GaAs; YAG:Nd; YAl5O12:Nd; contact resistance; laser annealed W/Sn contacts; metal layers; n-type GaAs; preparation; sputtering method;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19940804
Filename :
299382
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1124976
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