InP-based single heterojunction bipolar transistors with improved breakdown characteristics

Author

Ren, Fengyuan ; Abernathy, C.R. ; Pearton, S.J. ; Wisk, Patrick W.

Author_Institution

AT&T Bell Labs., Murray Hill, NJ

Volume

30

Issue

14

fYear

1994

fDate

7/7/1994 12:00:00 AM

Firstpage

1184

Lastpage

1185

Abstract

InP-based heterojunction bipolar transistors (HBTs) have been fabricated from material grown by metal organic molecular beam epitaxy (MOMBE) using InGaAsP with a bandgap of 0.95 eV as both the collector and base material. The 400 Å collector was undoped with an electron concentration of 6×10¹⁶ cm^-3 and the 850 Å base layer was doped with Mg to a hole concentration of 10¹⁹ cm^-3. The DC current gain of a large area (90 μm diameter) device was measured to be 340 with a base sheet resistance of 760 Ω/□. The collector and base ideality factors were 1.1 and 1.4, respectively. The breakdown voltage V_CEO of 7.5 V represents a significant improvement over similar devices with conventional InGaAs collector and base layers

Keywords

III-V semiconductors; electric breakdown of solids; gallium arsenide; heterojunction bipolar transistors; indium compounds; magnesium; molecular beam epitaxial growth; 7.5 V; 90 micron; InP-based HBT; InP:Sn-InGaAsP-InGaAsP:Mg; MOMBE; breakdown characteristics; electron concentration; heterojunction bipolar transistors; hole concentration; metal organic MBE; molecular beam epitaxy;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19940757

Filename

299390