Title :
Origin of Vt instabilities in high-k dielectrics Jahn-Teller effect or oxygen vacancies
Author :
Ribes, Guillaume ; Bruyere, S. ; Roy, D. ; Parthasarthy, C. ; Muller, M. ; Denais, M. ; Huard, V. ; Skotnicki, T. ; Ghibaudo, G.
Author_Institution :
Central R&D Labs., Crolles
fDate :
6/1/2006 12:00:00 AM
Abstract :
In this paper, an analysis of the trapping in high- dielectrics and its origin is given. It is found that the defect is consistent with oxygen vacancies in monoclinic hafnia. Finally, guidelines are proposed to reduce these instabilities
Keywords :
Jahn-Teller effect; electron traps; hafnium compounds; high-k dielectric thin films; tunnelling; vacancies (crystal); Jahn-Teller effect; high-k dielectrics; monoclinic hafnia; oxygen vacancies; positive bias temperature instability; trapping process; Dielectric materials; Electron traps; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; Laboratories; Oxygen; Pulse measurements; Research and development; Temperature; HfSiON; high-; positive bias temperature instability (PBTI);
Journal_Title :
Device and Materials Reliability, IEEE Transactions on
DOI :
10.1109/TDMR.2006.877867
