Design for ASIC reliability for low-temperature applications

Author

Chen, Yuan ; Westergard, Lynett ; Mojarradi, Mohammad M. ; Johnson, Travis W. ; Cozy, Raymond Scott ; Billman, Curtis ; Burke, Gary R. ; Kolawa, Elizabeth A.

Author_Institution

Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA

Volume

6

Issue

2

fYear

2006

fDate

6/1/2006 12:00:00 AM

Firstpage

146

Lastpage

153

Abstract

A design for reliability methodology has been developed for electronics for low-temperature applications. A hot carrier aging (HCA) lifetime projection model is proposed to take into account the HCA impact on technology, analysis of parametric degradation versus critical circuit path degradation, transistor bias profile, transistor substrate current profile, and operating temperature profile. The most applicable transistor size can be determined in order to meet the reliability requirements of the electronics operating under low temperatures. This methodology and approach can also be applied to other transistor-level failure and/or degradation mechanisms for applications with varying temperature ranges

Keywords

application specific integrated circuits; carrier lifetime; cryogenic electronics; hot carriers; integrated circuit reliability; life testing; ASIC reliability; circuit reliability; hot carrier aging lifetime projection model; low-temperature electronics; transistor-level failure; Aging; Application specific integrated circuits; Degradation; Design methodology; Hot carriers; Integrated circuit reliability; MOS devices; Substrates; Temperature dependence; Temperature distribution; Circuit reliability; device reliability; hot carrier aging (HCA); low-temperature electronics;

fLanguage

English

Journal_Title

Device and Materials Reliability, IEEE Transactions on

Publisher

ieee

ISSN

1530-4388

Type

jour

DOI

10.1109/TDMR.2006.876590

Filename

1673702