Title :
Via-depletion electromigration in copper interconnects
Author :
Christiansen, Cathryn J. ; Li, Baozhen ; Gill, Jason ; Filippi, Ronald ; Angyal, Matthew
Author_Institution :
Technol. Group, IBM Syst., Essex Junction, VT
fDate :
6/1/2006 12:00:00 AM
Abstract :
Via-depletion electromigration was studied under a number of conditions in a 65-nm technology. Observed failure distributions were either single mode or bimodal, depending on the structural configuration. The distribution and the time to fail for the early-fail mode of the bimodal distributions varied with linewidth, via redundancy, and via current density. Additionally, it was observed that for bimodal failure distributions, the length of the extension of the line past the via determined the fraction of early fails in the via. The bimodal behavior was suppressed by optimization of the via liner deposition process
Keywords :
copper; electromigration; failure analysis; integrated circuit interconnections; integrated circuit reliability; 65 nm; bimodal failure distributions; copper interconnects; via liner deposition process; via-depletion electromigration; Copper; Current density; Electromigration; Electrons; Integrated circuit interconnections; Paper technology; Redundancy; Variable speed drives; Wire; Wiring; Cu interconnect; electromigration; liner; redundancy; reliability; via; void;
Journal_Title :
Device and Materials Reliability, IEEE Transactions on
DOI :
10.1109/TDMR.2006.876595
