Via-depletion electromigration in copper interconnects

Author

Christiansen, Cathryn J. ; Li, Baozhen ; Gill, Jason ; Filippi, Ronald ; Angyal, Matthew

Author_Institution

Technol. Group, IBM Syst., Essex Junction, VT

Volume

6

Issue

2

fYear

2006

fDate

6/1/2006 12:00:00 AM

Firstpage

163

Lastpage

168

Abstract

Via-depletion electromigration was studied under a number of conditions in a 65-nm technology. Observed failure distributions were either single mode or bimodal, depending on the structural configuration. The distribution and the time to fail for the early-fail mode of the bimodal distributions varied with linewidth, via redundancy, and via current density. Additionally, it was observed that for bimodal failure distributions, the length of the extension of the line past the via determined the fraction of early fails in the via. The bimodal behavior was suppressed by optimization of the via liner deposition process

Keywords

copper; electromigration; failure analysis; integrated circuit interconnections; integrated circuit reliability; 65 nm; bimodal failure distributions; copper interconnects; via liner deposition process; via-depletion electromigration; Copper; Current density; Electromigration; Electrons; Integrated circuit interconnections; Paper technology; Redundancy; Variable speed drives; Wire; Wiring; Cu interconnect; electromigration; liner; redundancy; reliability; via; void;

fLanguage

English

Journal_Title

Device and Materials Reliability, IEEE Transactions on

Publisher

ieee

ISSN

1530-4388

Type

jour

DOI

10.1109/TDMR.2006.876595

Filename

1673704