Title :
Moisture influence on porous low-k reliability
Author :
Michelon, Julien ; Hoofman, Romano J O M
Author_Institution :
Philips Res. Leuven
fDate :
6/1/2006 12:00:00 AM
Abstract :
In this paper, the impact of moisture on the reliability of porous low-k materials has been investigated. It was found that moisture uptake is higher for more porous SiOC low-k materials, and its presence inside the low-k has a strong impact on the dielectric reliability. It has been demonstrated that by eliminating moisture, the leakage current can be significantly decreased; in addition, higher breakdown electric fields and longer dielectric lifetimes can be achieved. Therefore, integration of porous low-k materials requires maximum attention to prevent moisture uptake at each step during integration; in addition, the passivation layers need to be perfectly hermetic in order to maintain good dielectric reliability
Keywords :
dielectric materials; electric breakdown; moisture; porous materials; reliability; SiOC; breakdown electric fields; dielectric lifetimes; dielectric reliability; leakage current; moisture effect; passivation layers; porous low k materials; Capacitance; Copper; Current measurement; Degradation; Dielectric breakdown; Dielectric materials; Leakage current; Materials reliability; Moisture; Plasma materials processing; Moisture; porous low-; reliability;
Journal_Title :
Device and Materials Reliability, IEEE Transactions on
DOI :
10.1109/TDMR.2006.877365
