DocumentCode
1125164
Title
Stress migration lifetime for Cu interconnects with CoWP-only cap
Author
Gambino, Jeffrey P. ; Johnson, Christy L. ; Therrien, Joseph E. ; Hunt, Douglas B. ; Wynne, Jean E. ; Smith, Sean ; Mongeon, Stephen A. ; Pokrinchak, D. Philip ; Levin, Theodore M.
Author_Institution
IBM Microelectron., Essex Junction, VT
Volume
6
Issue
2
fYear
2006
fDate
6/1/2006 12:00:00 AM
Firstpage
197
Lastpage
202
Abstract
Stress migration lifetime is characterized for a CoWP-only cap process (i.e., no dielectric cap) and a CoWP + SiN cap process. For the CoWP-only process, the stress migration lifetime depends on the CoWP thickness. In order to achieve a long stress migration lifetime, the CoWP must be sufficiently thick to protect the Cu during the via etch and strip processes. The data suggests that CoWP removal is enhanced beneath partially landed vias, resulting in reduced stress migration lifetime
Keywords
cobalt compounds; copper; integrated circuit interconnections; integrated circuit reliability; stress effects; CoWP; Cu; copper interconnects; etch process; stress migration lifetime; strip process; Associate members; Dielectrics; Integrated circuit interconnections; LAN interconnection; Photodiodes; Protection; Reflectivity; Silicon compounds; Stress; Strips; CoWP; Cu interconnect; stress migration;
fLanguage
English
Journal_Title
Device and Materials Reliability, IEEE Transactions on
Publisher
ieee
ISSN
1530-4388
Type
jour
DOI
10.1109/TDMR.2006.876602
Filename
1673711
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