Title :
Flash memory electromagnetic compatibility
Author :
Fogle, Adam D. ; Darling, Don ; Blish, Richard C., II ; Daszko, Gene
Author_Institution :
Spansion Inc., Sunnyvale, CA
fDate :
6/1/2006 12:00:00 AM
Abstract :
This paper analyzes the radiated electromagnetic compatibility (EMC) behavior of AMD/Spansion Flash memory integrated circuits. Using The Engineering Society For Advanced Mobility Land Sea Air and Space (SAE) J1752/3 method, the peak RF noise (EMC with respect to radiated emissions) was measured for various technologies and product features, determining statistically valid sensitivity factors for several independent variables. The findings show that radiated emissions vary based on technology shrink, memory size, access time, and package. The authors are able to predict a device´s radiated EMI to a precision of ~4dBmuV (one sigma) and with good accuracy by fitting noise performance as a function of a density parameter (a combination of technology critical dimensions and number of bits) and the logarithm of the access time. It was found that devices built on current technologies generate much less noise than their predecessors primarily due to slew rate control to permit simultaneous read/write operations, output buffer driver design improvements, and smaller radiating antennae
Keywords :
MOS memory circuits; electromagnetic compatibility; electromagnetic interference; flash memories; integrated circuit noise; integrated memory circuits; J1752/3 method; MOS memory integrated circuits; access time; electromagnetic compatibility; electromagnetic interference; flash memory; integrated circuit noise; memory size; peak RF noise; radiated emissions; sensitivity factors; technology shrink; Electromagnetic analysis; Electromagnetic compatibility; Electromagnetic measurements; Extraterrestrial measurements; Flash memory; Integrated circuit noise; Noise measurement; Radio frequency; Sea measurements; Space technology; Electromagnetic compatibility; MOS memory integrated circuits; electromagnetic interference; integrated circuit noise;
Journal_Title :
Device and Materials Reliability, IEEE Transactions on
DOI :
10.1109/TDMR.2006.876573