Photoconductivity in ZnSe under high electric fields

Author

Cho, Pak S. ; Ho, P.-T. ; Goldhar, Julius ; Lee, Chi H.

Author_Institution

Dept. of Electr. Eng., Maryland Univ., College Park, MD, USA

Volume

30

Issue

6

fYear

1994

fDate

6/1/1994 12:00:00 AM

Firstpage

1489

Lastpage

1497

Abstract

High voltage photoconductive switches utilizing polycrystalline ZnSe mere investigated. Experiments have been performed on polycrystalline ZnSe switches in a longitudinal geometry. Electrodes of perforated metal films, a transparent liquid electrolyte, plasma, and ultraviolet-light-generated carriers were used. High-bias fields of up to 100 kV/cm and current densities over 100 kA/cm² can be applied to the polycrystalline ZnSe switches. Nonlinear effects were observed at high fields with near band edge illumination. Applications of these effects are discussed

Keywords

II-VI semiconductors; high field effects; photoconducting devices; photoconductivity; semiconductor switches; zinc compounds; ZnSe; current densities; high electric fields; high voltage photoconductive switches; near band edge illumination; nonlinear effects; perforated metal film electrode; photoconductivity; plasma electrode; polycrystalline ZnSe; transparent liquid electrolyte electrode; ultraviolet-light-generated carrier electrode; wide-bandgap material; Current density; Electrodes; Geometry; Lighting; Photoconductivity; Plasma applications; Plasma density; Switches; Voltage; Zinc compounds;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.299474

Filename

299474