Title :
Photoconductivity in ZnSe under high electric fields
Author :
Cho, Pak S. ; Ho, P.-T. ; Goldhar, Julius ; Lee, Chi H.
Author_Institution :
Dept. of Electr. Eng., Maryland Univ., College Park, MD, USA
fDate :
6/1/1994 12:00:00 AM
Abstract :
High voltage photoconductive switches utilizing polycrystalline ZnSe mere investigated. Experiments have been performed on polycrystalline ZnSe switches in a longitudinal geometry. Electrodes of perforated metal films, a transparent liquid electrolyte, plasma, and ultraviolet-light-generated carriers were used. High-bias fields of up to 100 kV/cm and current densities over 100 kA/cm2 can be applied to the polycrystalline ZnSe switches. Nonlinear effects were observed at high fields with near band edge illumination. Applications of these effects are discussed
Keywords :
II-VI semiconductors; high field effects; photoconducting devices; photoconductivity; semiconductor switches; zinc compounds; ZnSe; current densities; high electric fields; high voltage photoconductive switches; near band edge illumination; nonlinear effects; perforated metal film electrode; photoconductivity; plasma electrode; polycrystalline ZnSe; transparent liquid electrolyte electrode; ultraviolet-light-generated carrier electrode; wide-bandgap material; Current density; Electrodes; Geometry; Lighting; Photoconductivity; Plasma applications; Plasma density; Switches; Voltage; Zinc compounds;
Journal_Title :
Quantum Electronics, IEEE Journal of
