Title :
Structure-dependent threshold current density for CdZnSe-based II-VI semiconductor lasers
Author_Institution :
Dept. of Electr. Eng., Nat. Univ. of Singapore, Singapore
fDate :
7/1/1994 12:00:00 AM
Abstract :
The optical gain and threshold current density of CdZnSe-based semiconductor lasers are calculated theoretically with strain and quantum confinement effects taken into account. Both diffusion and drift components are incorporated into the calculation of leakage current. Optimized structures are obtained for CdZnSe-based lasers with different structures through minimizing the threshold current density. A minimum current density of about 200 A/cm2 is obtained for a Cd0.2Zn0.8Se/ZnS0.06Se0.94 /Zn0.75Mg0.25S0.42Se0.58 modified MQW laser
Keywords :
II-VI semiconductors; cadmium compounds; laser theory; leakage currents; semiconductor lasers; zinc compounds; Cd0.2Zn0.8Se-ZnS0.06Se0.94 -Zn0.75Mg0.25S0.42Se0.58 ; CdZnSe-based II-VI semiconductor lasers; MQW laser; diffusion current; drift current; leakage current; optical gain; optimized structures; quantum confinement; strain; threshold current density; Diode lasers; Effective mass; Holographic optical components; Holography; Laser theory; Optical pumping; Quantum well devices; Quantum well lasers; Semiconductor lasers; Threshold current;
Journal_Title :
Quantum Electronics, IEEE Journal of
