Structure-dependent threshold current density for CdZnSe-based II-VI semiconductor lasers

Author

Wu, Yi-Hong

Author_Institution

Dept. of Electr. Eng., Nat. Univ. of Singapore, Singapore

Volume

30

Issue

7

fYear

1994

fDate

7/1/1994 12:00:00 AM

Firstpage

1562

Lastpage

1573

Abstract

The optical gain and threshold current density of CdZnSe-based semiconductor lasers are calculated theoretically with strain and quantum confinement effects taken into account. Both diffusion and drift components are incorporated into the calculation of leakage current. Optimized structures are obtained for CdZnSe-based lasers with different structures through minimizing the threshold current density. A minimum current density of about 200 A/cm² is obtained for a Cd_0.2Zn_0.8Se/ZnS_0.06Se_0.94/Zn_0.75Mg_0.25S_0.42Se_0.58 modified MQW laser

Keywords

II-VI semiconductors; cadmium compounds; laser theory; leakage currents; semiconductor lasers; zinc compounds; Cd_0.2Zn_0.8Se-ZnS_0.06Se_0.94 -Zn_0.75Mg_0.25S_0.42Se_0.58; CdZnSe-based II-VI semiconductor lasers; MQW laser; diffusion current; drift current; leakage current; optical gain; optimized structures; quantum confinement; strain; threshold current density; Diode lasers; Effective mass; Holographic optical components; Holography; Laser theory; Optical pumping; Quantum well devices; Quantum well lasers; Semiconductor lasers; Threshold current;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.299488

Filename

299488