Title :
Effect of a Magnetic Field on Wideband Terahertz Generation on the Surface of Semiconductors
Author :
Antsygin, Valery D. ; Mamrashev, Alexander A. ; Nikolaev, Nazar A. ; Potaturkin, Oleg I.
Author_Institution :
Inst. of Autom. & Electrometry, Novosibirsk, Russia
Abstract :
The effect of a magnetic field on the enhancement of the efficiency of terahertz (THz) generation on the surface of narrow-gap semiconductors is analyzed. A novel small-size THz generator is proposed. It consists of two permanent magnets with opposite magnetization placed on a yoke forming Kittel structure. The construction provides magnetic field concentration in the active zone of a semiconductor placed closely on top of the magnets. Its capabilities of converting femtosecond pulses of the first and second harmonics of an erbium fiber laser are investigated by THz time-domain spectrometer. n-InAs and n-InSb semiconductors in the magnetic field of 0.8 T prove to be the best THz generators at 775- and 1550-nm pump wavelengths correspondingly.
Keywords :
III-V semiconductors; erbium; fibre lasers; high-speed optical techniques; indium compounds; narrow band gap semiconductors; optical harmonic generation; terahertz wave generation; terahertz wave spectra; Er; InAs; InSb; THz time-domain spectrometry; erbium fiber laser; femtosecond pulses; magnetic field concentration; magnetic flux density 0.8 T; magnetization; narrow-gap semiconductors; permanent magnets; terahertz generation; wavelength 1550 nm; wavelength 775 nm; yoke-forming Kittel structure; Laser excitation; Magnetic semiconductors; Optical surface waves; Perpendicular magnetic anisotropy; Saturation magnetization; Semiconductor lasers; InAs; InSb; THz spectroscopy; magnetic field; narrow-gap semiconductor; optical rectification; photo-Dember effect; terahertz (THz) generator;
Journal_Title :
Terahertz Science and Technology, IEEE Transactions on
DOI :
10.1109/TTHZ.2015.2443493
