A New Extraction Method of Trap States in Amorphous InGaZnO Thin-Film Transistors

Author

Lei Qiang ; Ruo-He Yao

Author_Institution

Sch. of Electron. & Inf. Eng., South China Univ. of Technol., Guangzhou, China

Volume

11

Issue

4

fYear

2015

fDate

Apr-15

Firstpage

325

Lastpage

329

Abstract

A method to extract the density of subgap states in amorphous InGaZnO thin-film transistors is proposed. The nonuniform characteristic of surface potential along the channel has been taken into account. The variation of interface state density with the applied bias voltage is derived from the capacitance-voltage characteristic. In addition, by combining the obtained density of interface states with the subthreshold swing, the energy distribution of bulk traps is determined. Results fit well with the experimental data.

Keywords

III-V semiconductors; amorphous semiconductors; indium compounds; surface potential; thin film transistors; InGaZnO; amorphous thin-film transistors; applied bias voltage; bulk traps; capacitance-voltage characteristic; energy distribution; interface state density; subgap states; subthreshold swing; surface potential; trap states; Capacitance; Electron traps; Insulators; Interface states; Logic gates; Thin film transistors; Amorphous InGaZnO (a-IGZO); density of subgap states; nonuniform; thin-film transistors (TFTs);

fLanguage

English

Journal_Title

Display Technology, Journal of

Publisher

ieee

ISSN

1551-319X

Type

jour

DOI

10.1109/JDT.2014.2387378

Filename

7000987