Title :
A New Extraction Method of Trap States in Amorphous InGaZnO Thin-Film Transistors
Author :
Lei Qiang ; Ruo-He Yao
Author_Institution :
Sch. of Electron. & Inf. Eng., South China Univ. of Technol., Guangzhou, China
Abstract :
A method to extract the density of subgap states in amorphous InGaZnO thin-film transistors is proposed. The nonuniform characteristic of surface potential along the channel has been taken into account. The variation of interface state density with the applied bias voltage is derived from the capacitance-voltage characteristic. In addition, by combining the obtained density of interface states with the subthreshold swing, the energy distribution of bulk traps is determined. Results fit well with the experimental data.
Keywords :
III-V semiconductors; amorphous semiconductors; indium compounds; surface potential; thin film transistors; InGaZnO; amorphous thin-film transistors; applied bias voltage; bulk traps; capacitance-voltage characteristic; energy distribution; interface state density; subgap states; subthreshold swing; surface potential; trap states; Capacitance; Electron traps; Insulators; Interface states; Logic gates; Thin film transistors; Amorphous InGaZnO (a-IGZO); density of subgap states; nonuniform; thin-film transistors (TFTs);
Journal_Title :
Display Technology, Journal of
DOI :
10.1109/JDT.2014.2387378
