Title :
Inductively Coupled Argon Plasma-Enhanced Quantum-Well Intermixing: Cap Layer Effect and Plasma Process Influence
Author :
Xu, Chengdong ; Mei, Ting
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore
Abstract :
Comprehensive investigation on inductively coupled argon plasma-enhanced quantum-well intermixing is done on an InGaAs-InP quantum-well structure with p-/n-doped InP and InGaAs caps using polarized edge-emitting photoluminescence analysis technique. The derived diffusion lengths on group V and III sublattices show that the cap material plays an important role as it influences both the accumulation and diffusion of point defects during plasma process and annealing process, respectively. The large blue and red shift can be realized with p-InP and n-InGaAs caps, respectively, by controlling the diffusion length ratio for interdiffusion on two sublattices.
Keywords :
III-V semiconductors; annealing; chemical interdiffusion; gallium arsenide; indium compounds; photoluminescence; plasma materials processing; red shift; semiconductor quantum wells; InGaAs-InP; annealing process; diffusion lengths; interdiffusion; plasma-enhanced quantum-well intermixing; polarized edge-emitting photoluminescence; quantum-well structure; Annealing; Argon; III-V semiconductor materials; Indium phosphide; Optical materials; Photonic band gap; Plasma materials processing; Quantum well devices; Quantum wells; Thermal stability; Inductively coupled plasma (ICP); interdiffusion; photonic integrated circuits (PICs); quantum wells (QWs); quantum-well intermixing (QWI);
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.2009.2014649
