DocumentCode :
1126046
Title :
Electrooptic junction modulators
Author :
Oldham, William G. ; Bahraman, Ali
Author_Institution :
University of California, Berkeley, CA, USA
Volume :
3
Issue :
7
fYear :
1967
fDate :
7/1/1967 12:00:00 AM
Firstpage :
278
Lastpage :
286
Abstract :
The use of 
junctions, 
junctions, metal semiconductor junctions, and heterojunctions as phase modulators is considered. The allowed modes of propagation through such junctions formed in both isotropic and uniaxial crystals are derived. The dependence of the propagation constant on the electric field is explicitly derived to yield the phase modulation properties of each structure, and the various structures are compared as high-frequency modulators. Heterojunction and junction modulators are found to be superior to junction modulators. Metal semiconductor junctions are found to be too lossy in the visible, but become attractive in the infrared.
junctions, junctions, metal semiconductor junctions, and heterojunctions as phase modulators is considered. The allowed modes of propagation through such junctions formed in both isotropic and uniaxial crystals are derived. The dependence of the propagation constant on the electric field is explicitly derived to yield the phase modulation properties of each structure, and the various structures are compared as high-frequency modulators. Heterojunction and junction modulators are found to be superior to junction modulators. Metal semiconductor junctions are found to be too lossy in the visible, but become attractive in the infrared.Keywords :
Crystals; Electromagnetic wave absorption; Electrooptic modulators; Microwave theory and techniques; Optical modulation; P-n junctions; PIN photodiodes; Paramagnetic materials; Paramagnetic resonance; Phase modulation;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1967.1074597
Filename :
1074597
Link To Document :
