A Light-Impact Model for p-Type and n-Type Poly-Si TFTs

Author

Papadopoulos, Nikolas P. ; Hatzopoulos, Alkis A. ; Papakostas, Dimitris K. ; Picos, Rodrigo ; Dimitriadis, Charalabos A. ; Siskos, Stylianos

Author_Institution

Dept. of Electr. & Comput. Eng., Aristotle Univ. of Thessaloniki, Thessaloniki, Greece

Volume

5

Issue

7

fYear

2009

fDate

7/1/2009 12:00:00 AM

Firstpage

265

Lastpage

272

Abstract

This paper introduces and verifies a new light-impact model (LIM) for both p-type and n-type polycrystalline thin-film transistors (poly-Si TFTs). The ratio of the produced current under a specific light intensity (I_d) over the dark current (I_dark) is calculated. The new model has been also implemented in the circuit simulation program HSPICE. Comparative results between measurements and simulated characteristics are presented for different sizes of widths/lengths, different values of the V_ds and V_gs voltages and of light intensities.

Keywords

SPICE; elemental semiconductors; silicon; thin film transistors; Si; circuit simulation program HSPICE; light-impact model; polycrystalline thin-film transistors; specific light intensity; Circuit simulation; Electron traps; Grain boundaries; Laboratories; Length measurement; Lighting; Mathematical model; SPICE; Semiconductor process modeling; Thin film transistors; $I$– $V$ modeling; Light; SPICE; impact; influence; n-type; optical; p-type; polysilicon thin-film transistors (poly-Si TFTs);

fLanguage

English

Journal_Title

Display Technology, Journal of

Publisher

ieee

ISSN

1551-319X

Type

jour

DOI

10.1109/JDT.2009.2015898

Filename

5153588