DocumentCode :
1126072
Title :
A Light-Impact Model for p-Type and n-Type Poly-Si TFTs
Author :
Papadopoulos, Nikolas P. ; Hatzopoulos, Alkis A. ; Papakostas, Dimitris K. ; Picos, Rodrigo ; Dimitriadis, Charalabos A. ; Siskos, Stylianos
Author_Institution :
Dept. of Electr. & Comput. Eng., Aristotle Univ. of Thessaloniki, Thessaloniki, Greece
Volume :
5
Issue :
7
fYear :
2009
fDate :
7/1/2009 12:00:00 AM
Firstpage :
265
Lastpage :
272
Abstract :
This paper introduces and verifies a new light-impact model (LIM) for both p-type and n-type polycrystalline thin-film transistors (poly-Si TFTs). The ratio of the produced current under a specific light intensity (Id) over the dark current (Idark) is calculated. The new model has been also implemented in the circuit simulation program HSPICE. Comparative results between measurements and simulated characteristics are presented for different sizes of widths/lengths, different values of the Vds and Vgs voltages and of light intensities.
Keywords :
SPICE; elemental semiconductors; silicon; thin film transistors; Si; circuit simulation program HSPICE; light-impact model; polycrystalline thin-film transistors; specific light intensity; Circuit simulation; Electron traps; Grain boundaries; Laboratories; Length measurement; Lighting; Mathematical model; SPICE; Semiconductor process modeling; Thin film transistors; $I$– $V$ modeling; Light; SPICE; impact; influence; n-type; optical; p-type; polysilicon thin-film transistors (poly-Si TFTs);
fLanguage :
English
Journal_Title :
Display Technology, Journal of
Publisher :
ieee
ISSN :
1551-319X
Type :
jour
DOI :
10.1109/JDT.2009.2015898
Filename :
5153588
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1126072
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