DocumentCode
1126109
Title
Compensation of the Piezo-Hall Effect in Integrated Hall Sensors on (100)-Si
Author
Ausserlechner, Udo ; Motz, Mario ; Holliber, Michael
Author_Institution
Infineon Technol. Austria AG, Villach
Volume
7
Issue
11
fYear
2007
Firstpage
1475
Lastpage
1482
Abstract
Silicon Hall sensors are known to suffer from a long-term drift in the magnetic sensitivity between 1% and 4%, depending on the degree of moisture in the mold compound of the package. This drift is mainly caused by changes of mechanical stress exerted by the plastic package onto the die. We present a system, which continuously measures the relevant stress components, estimates the sensitivity drift, and corrects for it digitally. An individual precalibration versus temperature is necessary to achieve the required level of accuracy. Results from laboratory characterization with pressure cells and lifetime drift during qualification runs show that this system can keep the drift of magnetic sensitivity well below 1%.
Keywords
Hall effect; Hall effect devices; electric sensing devices; piezoresistive devices; silicon; integrated Hall sensors; magnetic sensitivity; mechanical stress; piezo-Hall effect; plastic package; sensitivity drift; temperature calibration; Assembly; CMOS technology; Hall effect devices; Magnetic sensors; Mechanical sensors; Moisture; Packaging; Sensor phenomena and characterization; Stress measurement; Temperature sensors; Magnetic sensitivity drift; mechanical stress compensation; package stress; piezo-Hall; piezo-resistance;
fLanguage
English
Journal_Title
Sensors Journal, IEEE
Publisher
ieee
ISSN
1530-437X
Type
jour
DOI
10.1109/JSEN.2007.907039
Filename
4305207
Link To Document