• DocumentCode
    1126109
  • Title

    Compensation of the Piezo-Hall Effect in Integrated Hall Sensors on (100)-Si

  • Author

    Ausserlechner, Udo ; Motz, Mario ; Holliber, Michael

  • Author_Institution
    Infineon Technol. Austria AG, Villach
  • Volume
    7
  • Issue
    11
  • fYear
    2007
  • Firstpage
    1475
  • Lastpage
    1482
  • Abstract
    Silicon Hall sensors are known to suffer from a long-term drift in the magnetic sensitivity between 1% and 4%, depending on the degree of moisture in the mold compound of the package. This drift is mainly caused by changes of mechanical stress exerted by the plastic package onto the die. We present a system, which continuously measures the relevant stress components, estimates the sensitivity drift, and corrects for it digitally. An individual precalibration versus temperature is necessary to achieve the required level of accuracy. Results from laboratory characterization with pressure cells and lifetime drift during qualification runs show that this system can keep the drift of magnetic sensitivity well below 1%.
  • Keywords
    Hall effect; Hall effect devices; electric sensing devices; piezoresistive devices; silicon; integrated Hall sensors; magnetic sensitivity; mechanical stress; piezo-Hall effect; plastic package; sensitivity drift; temperature calibration; Assembly; CMOS technology; Hall effect devices; Magnetic sensors; Mechanical sensors; Moisture; Packaging; Sensor phenomena and characterization; Stress measurement; Temperature sensors; Magnetic sensitivity drift; mechanical stress compensation; package stress; piezo-Hall; piezo-resistance;
  • fLanguage
    English
  • Journal_Title
    Sensors Journal, IEEE
  • Publisher
    ieee
  • ISSN
    1530-437X
  • Type

    jour

  • DOI
    10.1109/JSEN.2007.907039
  • Filename
    4305207