Title :
Low-Crosstalk in Silicon-On-Insulator Waveguide Crossings With Optimized-Angle
Author :
Sanchis, P. ; Galán, J.V. ; Griol, A. ; Martí, J. ; Piqueras, M.A. ; Perdigues, J.M.
Author_Institution :
Polytech. Univ. of Valency, Valencia
Abstract :
Low crosstalk losses in silicon-on-insulator waveguides are demonstrated by choosing the optimum crossing angle. It is obtained that by using the crossing angles of 60deg or 120deg instead of the conventional 90deg crossing angle crosstalk losses are improved by more than 10 dB without degrading transmission losses. Experimental results show a very good agreement with three-dimensional finite-difference time-domain simulation results. The proposed crossing structure has a high compactness, a broad bandwidth with almost flat transmission losses and constant crosstalk losses, and is robust against fabrication inaccuracies.
Keywords :
optical waveguides; silicon-on-insulator; crosstalk losses; flat transmission losses; silicon-on-insulator waveguide crossings; three-dimensional finite-difference time-domain simulation; Bandwidth; Crosstalk; Degradation; Optical losses; Optical waveguides; Propagation losses; Robustness; Silicon compounds; Silicon on insulator technology; Space technology; Crossings; passive circuits; photonic integrated circuits; silicon-on-insulator (SOI) technology;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2007.904330
