Title :
Surface Processing of CdTe Detectors Using Hydrogen Bromide-Based Etching Solution
Author :
Niraula, M. ; Yasuda, K. ; Takai, N. ; Matsumoto, M. ; Suzuki, Y. ; Tsukamoto, Y. ; Ito, Y. ; Sugimoto, S. ; Kouno, S. ; Yamazaki, D. ; Agata, Y.
Author_Institution :
Grad. Sch. of Eng., Nagoya Inst. of Technol., Nagoya, Japan
Abstract :
Chemical etching of CdTe crystals using hydrogen bromide (HBr)-based etchant was studied and its effectiveness in detector leakage current, gamma radiation detection performance was compared with that of a conventional Br-methanol (BM) etched detector. It was found that effect of surface leakage in total detector leakage current was lower in the HBr-processed detectors, and they also exhibited better radiation detection performances than that of the conventional BM-etched detectors. A slight variation in surface chemical states was found in these differently processed crystals which could be related to the observed differences in detector properties.
Keywords :
II-VI semiconductors; cadmium compounds; etching; gamma-ray detection; leakage currents; semiconductor counters; surface states; wide band gap semiconductors; CdTe; CdTe detectors; chemical etching; gamma radiation detection performance; hydrogen bromide-based etching solution; surface chemical states; surface leakage effect; surface processing; total detector leakage current; Cadmium compounds; Crystals; Detectors; II-VI semiconductor materials; Leakage currents; Radiation detectors; Surface treatment; CdTe; Nuclear radiation detector; Surface etching; nuclear radiation detector; spectroscopy; surface etching;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2015.2450835
