Title :
Tri-Gate Bulk MOSFET Design for CMOS Scaling to the End of the Roadmap
Author :
Sun, Xin ; Lu, Qiang ; Moroz, Victor ; Takeuchi, Hideki ; Gebara, Gabriel ; Wetzel, Jeffrey ; Ikeda, Shuji ; Shin, Changhwan ; Liu, Tsu-Jae King
Author_Institution :
Univ. of California, Berkeley
fDate :
5/1/2008 12:00:00 AM
Abstract :
A tri-gate bulk MOSFET design utilizing a low-aspect-ratio channel is proposed to provide an evolutionary pathway for CMOS scaling to the end of the roadmap. 3-D device simulations indicate that this design offers the advantages of a multi-gate FET (reduced variability in performance and improved scalability) together with the advantages of a conventional planar MOSFET (low substrate cost and capability for dynamic threshold-voltage control).
Keywords :
CMOS integrated circuits; MOSFET; CMOS scaling; evolutionary pathway; low-aspect-ratio channel; multigate FET; tri-gate bulk MOSFET; MOSFET; multi-gate FET; scalability; variability;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2008.919795
