DocumentCode
1126432
Title
Ten-thousand-hour operation of crank transverse-junction-stripe lasers grown by metal-organic chemical vapor deposition
Author
Isshiki, K. ; Kaneno, N. ; Kumabe, H. ; Namizaki, Hirofumi ; Ikeda, Kenji ; Susaki, Wataru
Author_Institution
Mitubishi Electric Corporation, Hyogo, Japan
Volume
4
Issue
10
fYear
1986
fDate
10/1/1986 12:00:00 AM
Firstpage
1475
Lastpage
1481
Abstract
For over 10 000 h, crank transverse-junction-stripe (TJS) laser diodes, grown by metal-organic chemical vapor deposition (MOCVD) maintain low and quite stable operating currents in the automatic-power-control aging with output power of 5 mW/facet at 55°C and 70°C. These MO-CVD lasers have excellent initial characteristics and small distributions of the characteristics. The reason for this excellent result is discussed in relation to the crystalline quality and the uniform growth of MO-CVD wafers.
Keywords
Epitaxial growth; Gallium materials/lasers; Aging; Chemical lasers; Chemical vapor deposition; Diode lasers; Epitaxial growth; Gallium arsenide; Power generation; Substrates; Surface morphology; Temperature;
fLanguage
English
Journal_Title
Lightwave Technology, Journal of
Publisher
ieee
ISSN
0733-8724
Type
jour
DOI
10.1109/JLT.1986.1074638
Filename
1074638
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