• DocumentCode
    1126432
  • Title

    Ten-thousand-hour operation of crank transverse-junction-stripe lasers grown by metal-organic chemical vapor deposition

  • Author

    Isshiki, K. ; Kaneno, N. ; Kumabe, H. ; Namizaki, Hirofumi ; Ikeda, Kenji ; Susaki, Wataru

  • Author_Institution
    Mitubishi Electric Corporation, Hyogo, Japan
  • Volume
    4
  • Issue
    10
  • fYear
    1986
  • fDate
    10/1/1986 12:00:00 AM
  • Firstpage
    1475
  • Lastpage
    1481
  • Abstract
    For over 10 000 h, crank transverse-junction-stripe (TJS) laser diodes, grown by metal-organic chemical vapor deposition (MOCVD) maintain low and quite stable operating currents in the automatic-power-control aging with output power of 5 mW/facet at 55°C and 70°C. These MO-CVD lasers have excellent initial characteristics and small distributions of the characteristics. The reason for this excellent result is discussed in relation to the crystalline quality and the uniform growth of MO-CVD wafers.
  • Keywords
    Epitaxial growth; Gallium materials/lasers; Aging; Chemical lasers; Chemical vapor deposition; Diode lasers; Epitaxial growth; Gallium arsenide; Power generation; Substrates; Surface morphology; Temperature;
  • fLanguage
    English
  • Journal_Title
    Lightwave Technology, Journal of
  • Publisher
    ieee
  • ISSN
    0733-8724
  • Type

    jour

  • DOI
    10.1109/JLT.1986.1074638
  • Filename
    1074638