Nanoscale Epitaxial Lateral Overgrowth of GaN-Based Light-Emitting Diodes on an AlN Nanorod-Array Template

Author

Chen-Hung Tsai ; Mu-Hsin Ma ; Yu-Feng Yin ; Hsiang-Wei Li ; Wei-Chih Lai ; Jianjang Huang

Author_Institution

Grad. Inst. of Photonics & Optoelectron., Nat. Taiwan Univ., Taipei, Taiwan

Volume

51

Issue

5

fYear

2015

fDate

May-15

Firstpage

1

Lastpage

5

Abstract

Despite the rapid progress of GaN light-emitting diodes, the quest for better epistructure quality with less defects and relaxed strains to achieve higher internal quantum efficiency has been a popular topic. Here, we propose an AlN nanorod template grown on the sapphire substrate using vapor-liquid-solid method. The corresponding material quality, including voids near nanorods, Raman spectra, and transmission electron microscopy images, indicates significant improvement.

Keywords

III-V semiconductors; Raman spectra; aluminium compounds; epitaxial growth; gallium compounds; light emitting diodes; light sources; nanofabrication; nanophotonics; nanorods; optical materials; sapphire; transmission electron microscopy; AlN; AlN nanorod template grown; AlN nanorod-array template; GaN; GaN light-emitting diodes; GaN-based light-emitting diodes; Raman spectra; defects; epistructure quality; higher internal quantum efficiency; material quality; nanoscale epitaxial lateral overgrowth; relaxed strains; sapphire substrate; transmission electron microscopy; vapor-liquid-solid method; voids; Buffer layer; Epitaxy; Light-emitting diodes; buffer layer; epitaxy;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/JQE.2015.2412957

Filename

7066933