• DocumentCode
    1126488
  • Title

    A criterion for stationary domain formation in GaAs MESFETs

  • Author

    Zhou, Haosheng ; Pulfrey, David L.

  • Author_Institution
    Dept. of Electr. Eng., British Columbia Univ., Vancouver, BC, Canada
  • Volume
    36
  • Issue
    5
  • fYear
    1989
  • fDate
    5/1/1989 12:00:00 AM
  • Firstpage
    872
  • Lastpage
    878
  • Abstract
    A one-dimensional model that analyzes the formation of stable, stationary domains in GaAs MESFETs is presented. The method utilizes phase portraits to represent the solutions to the ordinary differential equations that characterize the situation in the channel of the device. Two necessary conditions for the formation of stationary domains are revealed. One of these relates to the gate length and can be used to improve upon the commonly used criterion for domain formation of a doping-density minimum-gate-length product of >1012 cm-3
  • Keywords
    III-V semiconductors; Schottky gate field effect transistors; domains; gallium arsenide; semiconductor device models; GaAs; MESFETs; doping-density minimum-gate-length product; gate length; one-dimensional model; ordinary differential equations; phase portraits; stationary domain formation; Differential equations; Doping; Electron mobility; Gallium arsenide; Gunn devices; Helium; MESFETs; Neodymium; Poisson equations; Semiconductor process modeling;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.299668
  • Filename
    299668
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1126488