Title :
A criterion for stationary domain formation in GaAs MESFETs
Author :
Zhou, Haosheng ; Pulfrey, David L.
Author_Institution :
Dept. of Electr. Eng., British Columbia Univ., Vancouver, BC, Canada
fDate :
5/1/1989 12:00:00 AM
Abstract :
A one-dimensional model that analyzes the formation of stable, stationary domains in GaAs MESFETs is presented. The method utilizes phase portraits to represent the solutions to the ordinary differential equations that characterize the situation in the channel of the device. Two necessary conditions for the formation of stationary domains are revealed. One of these relates to the gate length and can be used to improve upon the commonly used criterion for domain formation of a doping-density minimum-gate-length product of >1012 cm-3
Keywords :
III-V semiconductors; Schottky gate field effect transistors; domains; gallium arsenide; semiconductor device models; GaAs; MESFETs; doping-density minimum-gate-length product; gate length; one-dimensional model; ordinary differential equations; phase portraits; stationary domain formation; Differential equations; Doping; Electron mobility; Gallium arsenide; Gunn devices; Helium; MESFETs; Neodymium; Poisson equations; Semiconductor process modeling;
Journal_Title :
Electron Devices, IEEE Transactions on
