Title :
The effect of fluorine in silicon dioxide gate dielectrics
Author :
Wright, Peter J. ; Saraswat, Krishna C.
Author_Institution :
Center for Integrated Syst., Stanford Univ., CA, USA
fDate :
5/1/1989 12:00:00 AM
Abstract :
The effect of post-oxide-growth fluorine incorporation in gate dielectrics is reported. Fluorine was introduced through ion implantation into polysilicon and diffused into the gate oxide, as indicated by SIMS measurements. No great decrease in the breakdown field was observed, although a decrease in charge-to-breakdown was seen. Interface characteristics also improved with medium to high doses of fluoride. High doses were found to grow additional oxide. NMOS FETs showed increased immunity to hot-electron-induced stress. These results are explained by a model wherein fluorine bonds to silicon, and the displaced oxygen grows the additional oxide
Keywords :
dielectric thin films; diffusion in solids; doping profiles; electric breakdown of solids; fluorine; insulated gate field effect transistors; secondary ion mass spectra; silicon compounds; NMOS FETs; SIMS; SiO2:F gate dielectrics; additional oxide; breakdown field; charge-to-breakdown; diffusion; hot-electron-induced stress; interface characteristics; ion implantation; polysilicon; Annealing; Degradation; Dielectric breakdown; Dielectric measurements; Electric breakdown; MOS capacitors; Silicides; Silicon compounds; Stress; Tungsten;
Journal_Title :
Electron Devices, IEEE Transactions on
