Title :
Nonvolatile Electrochemical Metallization Memory Based on Nanocrystalline La2O3 Solid Electrolyte Thin Film
Author :
Hongbin Zhao ; Hailing Tu ; Feng Wei ; Yuhua Xiong ; Jun Du
Author_Institution :
Adv. Electron. Mater. Inst., Gen. Res. Inst. for Nonferrous Metals, Beijing, China
Abstract :
Nanocrystalline La2O3 thin films are deposited on Pt/Ti/SiO2/Si substrate by reactive radio frequency magnetron sputtering. The Ag/La2O3/Pt devices exhibit reversible bipolar resistance change over 1000 cycles with a resistance ratio (high resistance state to low resistance state) of over three orders of magnitude and stable retention for over 106 s at room temperature. Analysis indicates that the resistance change originates from the formation/rupture of Ag filaments in the La2O3 thin films, which act as a solid electrolyte. The device shows potential for multilevel storage as well as low power consumption applications.
Keywords :
lanthanum compounds; metallisation; nanostructured materials; random-access storage; semiconductor thin films; solid electrolytes; sputtering; La2O3; multilevel storage; nanocrystalline solid electrolyte thin film; nonvolatile electrochemical metallization memory; reactive radio frequency magnetron sputtering; reversible bipolar resistance change; Electrodes; Electronic countermeasures; Nonvolatile memory; Resistance; Solids; Switches; Nanocrystalline La2O3 thin films; conductive filaments; electrochemical metallization memories (ECM); nanocrystalline La2O3 thin films; resistance change; resistance random access memory (RRAM);
Journal_Title :
Electron Devices Society, IEEE Journal of the
DOI :
10.1109/JEDS.2015.2412937
