Title :
A computer model for the simulation of thin-film silicon-hydrogen alloy solar cells
Author :
Gray, Jeffery L.
Author_Institution :
Sch. of Electr. Eng., Purdue Univ., West Lafayette, IN, USA
fDate :
5/1/1989 12:00:00 AM
Abstract :
A 1-D computer simulation code, Thin-Film Semiconductor Simulation Program (TFSSP), for the modeling of TF Si:H solar cells is discussed. The code incorporates a variety of physical models, such as a position-dependent bandgap, electron affinity, dielectric constant, density of states, mobility, exponential band tails, and dangling-bond defect states. This flexibility allows different model assumptions to be analyzed and compared. TFSSP and the physical models used are described. An example simulation of a typical TF Si:H solar cell is presented
Keywords :
amorphous semiconductors; electronic engineering computing; elemental semiconductors; hydrogen; semiconductor device models; semiconductor thin films; silicon; solar cells; 1D computer simulation code; Thin-Film Semiconductor Simulation Program; amorphous Si:H thin film solar cells; band tails; computer model; dangling-bond defect states; density of states; dielectric constant; electron affinity; mobility; physical models; position-dependent bandgap; Bonding; Computational modeling; Computer simulation; Photonic band gap; Photovoltaic cells; Radiative recombination; Semiconductor process modeling; Semiconductor thin films; Silicon alloys; Tail;
Journal_Title :
Electron Devices, IEEE Transactions on
