Title :
Surface-emitting laser diode with distributed Bragg reflector and buried heterostructure
Author :
Ogura, M. ; Mukai, Sonoyo ; Shimada, M. ; Asaka, T. ; Yamasaki, Y. ; Seki, Takaya ; WANO, H.
Author_Institution :
Electrotech. Lab., Tsukuba, Japan
Abstract :
A surface-emitting laser diode (SELD) with distributed Bragg reflector (DBR) and buried heterostructure (BH) is fabricated by the metalorganic chemical vapour deposition (MOCVD), reactive ion beam etching (RIBE) and liquid phase epitaxial (LPE) regrowth techniques. An Al0.1Ga0.9As/Al0.7Ga0.3As multilayer is employed for the lower reflector. The active region is embedded with Al0.4Ga0.6As current blocking layers. The threshold current is 28 mA, and the spectral width is 2.5 AA. A 2*2 array is also demonstrated.
Keywords :
III-V semiconductors; aluminium compounds; chemical vapour deposition; distributed Bragg reflector lasers; gallium arsenide; integrated optoelectronics; laser cavity resonators; liquid phase epitaxial growth; semiconductor epitaxial layers; semiconductor growth; semiconductor junction lasers; semiconductor junctions; sputter etching; 2*2 array; 28 mA; Al 0.1Ga 0.9As-Al 0.7Ga 0.3As multilayer; BH; DBR; LPE; MOCVD; RIBE; SELD; buried heterostructure; current blocking layers; distributed Bragg reflector; metalorganic chemical vapour deposition; reactive ion beam etching; spectral width; surface-emitting laser diode; threshold current;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900012
