Title :
A Correlated Diffusion Noise Model for the Field-Effect Transistor
Author :
Lee, Sungjae ; Webb, Kevin J.
Author_Institution :
Purdue Univ., West Lafayette
Abstract :
A numerical approach to simulate the intrinsic noise sources within transistors is described, and the impact of spatial correlation between local fluctuations is investigated. Using a 2-D numerical device solver, spectral densities for the gate and drain noise current sources and their correlation are evaluated using a Green´s function approach, which is an equivalent of Shockley´s impedance field method. Case studies with an AlGaN/GaN high electron mobility transistor are supported by measurement data. Using a spatial noise source correlation model, similar terminal noise is found to the case of an uncorrelated diffusion noise source. Therefore, using uncorrelated local noise sources to calculate the intrinsic terminal noise is found to be valid even for the submicrometer gate length field-effect transistor studied.
Keywords :
Green´s function methods; III-V semiconductors; aluminium compounds; gallium compounds; junction gate field effect transistors; semiconductor device models; semiconductor device noise; semiconductor junctions; wide band gap semiconductors; AlGaN-GaN - Interface; FET; Green´s function approach; Shockleys impedance field method; correlated diffusion noise model; drain noise current sources; high electron mobility transistor; intrinsic noise sources; numerical device solver; spatial noise source correlation model; spectral density; submicrometer gate length field-effect transistor; Aluminum gallium nitride; Circuit noise; Electrons; FETs; Fluctuations; Gallium nitride; Impedance; Numerical models; Numerical simulation; Semiconductor device noise; Correlation; Green´s function; diffusion processes; noise measurement; numerical analysis; semiconductor device noise;
Journal_Title :
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
DOI :
10.1109/TCAD.2007.895770
