DocumentCode :
1126560
Title :
Electrical crosstalk in p-i-n arrays - Part I: Theory
Author :
Kaplan, D.R. ; Forrest, S.R.
Author_Institution :
AT&T Bell Laboratories, Murray Hill, NJ, USA
Volume :
4
Issue :
10
fYear :
1986
fDate :
10/1/1986 12:00:00 AM
Firstpage :
1460
Lastpage :
1469
Abstract :
The electrical crosstalk between elements in a monolithic array of long wavelength p-i-n photodiodes is analyzed theoretically. It is shown that the parisitic capacitances in the external package are the dominant effects contributing to crosstalk, whereas resistive coupling leads to a negligible crosstalk. A general theory is derived to determine the effects of the capacitive coupling between channels on digital optical receiver sensitivity. The case of a raised cosine output waveform and an FET transimpedance amplifier is then considered to illustrate the tradeoff between crosstalk and receiver sensitivity. It is shown that the tradeoff may be optimized by varying the feedback resistance in a transimpedance amplifier.
Keywords :
Arrays; Crosstalk; Optical receivers; p-i-n photodiodes; Capacitance; Capacitors; Crosstalk; Detectors; Optical amplifiers; Optical receivers; P-i-n diodes; PIN photodiodes; Packaging; Resistors;
fLanguage :
English
Journal_Title :
Lightwave Technology, Journal of
Publisher :
ieee
ISSN :
0733-8724
Type :
jour
DOI :
10.1109/JLT.1986.1074653
Filename :
1074653
Link To Document :
بازگشت