Static and dynamic transconductance of MOSFETs

Author

Sharma, U. ; Booth, Richard V H ; White, Marvin H.

Author_Institution

Sherman Fairchild Center, Lehigh Univ., Bethlehem, PA, USA

Volume

36

Issue

5

fYear

1989

fDate

5/1/1989 12:00:00 AM

Firstpage

954

Lastpage

962

Abstract

A model for the dynamic transconductance of small-channel-length MOSFETs operating in the linear region is presented. The model includes the effects of interface traps and their frequency-dependent admittance, Coulombic scattering due to all charges near the Si-SiO₂ interface, and surface roughness scattering. This model is used to explain the behavior of measured devices that have been subjected to ionizing radiation that introduces charges in the insulator and at the insulator-semiconductor interface. In particular, it is shown that the transconductance peak increases with the frequency of operation. The size of this effect is related mainly to the density of interface traps but is also controlled by the number of trapped charges near the Si-SiO ₂ interface, which increases during irradiation. Static and high-frequency measurements of the transconductance of n-channel MOSFETs are compared with simulated results using the proposed model

Keywords

electric admittance; insulated gate field effect transistors; interface electron states; radiation effects; semiconductor device models; Coulombic scattering; Si-SiO₂ interface; dynamic transconductance; frequency-dependent admittance; insulator-semiconductor interface; interface traps; ionizing radiation; linear region; model; n-channel MOSFETs; small-channel-length MOSFETs; surface roughness scattering; trapped charges; Admittance; Current measurement; Frequency; Insulation; Ionizing radiation; MOSFETs; Rough surfaces; Scattering; Surface roughness; Transconductance;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.299678

Filename

299678