• DocumentCode
    1126609
  • Title

    Active feedback lightwave receivers

  • Author

    Williams, Gareth F. ; LeBlanc, Herve P.

  • Author_Institution
    AT&T Bell Laboratories, Holmdel, NJ, USA
  • Volume
    4
  • Issue
    10
  • fYear
    1986
  • fDate
    10/1/1986 12:00:00 AM
  • Firstpage
    1502
  • Lastpage
    1508
  • Abstract
    This paper describes new p-i-n-FET lightwave receivers that achieve high sensitivity without signal integration, and dynamic ranges large enough that they cannot be saturated by present lightwave transmitters. IC versions can be realized inexpensively in standard fine-line NMOS, CMOS, or GaAs IC technologies, and thus are suitable for loop-plant, local-area-network, and data link applications, as well as long-haul transmission applications. These receivers also can readily be designed for bit-rates in excess of 1 Gbit/s for high-capacity systems. In addition, these receivers can be implemented on the same IC as other system functions, e.g., for single-chip lightwave regenerators and lightwave modems, and, eventually, for microprocessors with on-chip optical communications ports.
  • Keywords
    CMOSFET amplifiers; Feedback circuits; MESFET amplifiers; MOSFET amplifiers; Optical receivers; p-i-n photodiodes; Application specific integrated circuits; CMOS integrated circuits; CMOS technology; Dynamic range; Feedback; Gallium arsenide; MOS devices; Optical receivers; Optical transmitters; Photonic integrated circuits;
  • fLanguage
    English
  • Journal_Title
    Lightwave Technology, Journal of
  • Publisher
    ieee
  • ISSN
    0733-8724
  • Type

    jour

  • DOI
    10.1109/JLT.1986.1074659
  • Filename
    1074659