Title :
Active feedback lightwave receivers
Author :
Williams, Gareth F. ; LeBlanc, Herve P.
Author_Institution :
AT&T Bell Laboratories, Holmdel, NJ, USA
fDate :
10/1/1986 12:00:00 AM
Abstract :
This paper describes new p-i-n-FET lightwave receivers that achieve high sensitivity without signal integration, and dynamic ranges large enough that they cannot be saturated by present lightwave transmitters. IC versions can be realized inexpensively in standard fine-line NMOS, CMOS, or GaAs IC technologies, and thus are suitable for loop-plant, local-area-network, and data link applications, as well as long-haul transmission applications. These receivers also can readily be designed for bit-rates in excess of 1 Gbit/s for high-capacity systems. In addition, these receivers can be implemented on the same IC as other system functions, e.g., for single-chip lightwave regenerators and lightwave modems, and, eventually, for microprocessors with on-chip optical communications ports.
Keywords :
CMOSFET amplifiers; Feedback circuits; MESFET amplifiers; MOSFET amplifiers; Optical receivers; p-i-n photodiodes; Application specific integrated circuits; CMOS integrated circuits; CMOS technology; Dynamic range; Feedback; Gallium arsenide; MOS devices; Optical receivers; Optical transmitters; Photonic integrated circuits;
Journal_Title :
Lightwave Technology, Journal of
DOI :
10.1109/JLT.1986.1074659