Title :
A simple analytical model for hot-carrier MOSFETs
Author :
El-Banna, Mohamed ; El-Nokali, Mahmoud A.
fDate :
5/1/1989 12:00:00 AM
Abstract :
Several second-order effects such as mobility degradation, carrier velocity saturation, and channel-length modulation are included in the model. The source-drain series resistances are accounted for, and a simple formula to calculate the output conductance without creating a discontinuity at the transition from the linear to the saturation region is proposed. The accuracy of the model is confirmed by comparing its theoretical predictions with the experimental data available in the literature. The model is used to estimate the lateral electric field at the drain to which hot-carrier effects are sensitive
Keywords :
carrier mobility; hot carriers; insulated gate field effect transistors; semiconductor device models; MOSFET; analytical model; carrier velocity saturation; channel-length modulation; hot-carrier effects; lateral electric field; mobility degradation; output conductance; saturation region; second-order effects; source-drain series resistances; Analytical models; Circuits; Degradation; Electrons; Hot carrier effects; Hot carriers; MOSFETs; Power supplies; Predictive models; Very large scale integration;
Journal_Title :
Electron Devices, IEEE Transactions on
