• DocumentCode
    1126619
  • Title

    Bulk and surface 1/f noise

  • Author

    Vandamme, Lode K J

  • Author_Institution
    Fac. of Electr. Eng., Eindhoven Univ. of Technol., Netherlands
  • Volume
    36
  • Issue
    5
  • fYear
    1989
  • fDate
    5/1/1989 12:00:00 AM
  • Firstpage
    987
  • Lastpage
    992
  • Abstract
    The 1/f noise of an n-type silicon MOSFET has been studied under conditions ranging from accumulation to depletion at 300 K. The experimental results are interpreted in terms of a bulk phenomenon and are characterized by Hooge´s empirical 1/f noise parameter α with values between 10-7 and 10-5. The α value for surface conduction at strong accumulation can be at least one order of magnitude larger than the value for bulk conduction
  • Keywords
    electron device noise; insulated gate field effect transistors; random noise; surface conductivity; 300 K; Hooge noise parameter; Si; accumulation; bulk 1/f noise; depletion; n-type MOSFET; surface 1/f noise; surface conduction; Annealing; Charge carriers; Fluctuations; History; Passivation; Resistors; Semiconductor device noise; Silicon; Surface treatment; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.299682
  • Filename
    299682
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1126619