DocumentCode :
1126628
Title :
Transient characteristics of n-channel hybrid Schottky injection FETs
Author :
Sin, Johnny K O ; Salama, C. Andre T ; Hou, Li-zhang
Volume :
36
Issue :
5
fYear :
1989
fDate :
5/1/1989 12:00:00 AM
Firstpage :
993
Lastpage :
1000
Abstract :
Theoretical transient characteristics of hybrid Schottky injection FETs (HSINFETs) are considered. The theoretical analysis is based on two-dimensional numerical simulations, in which the entire turn-off process and the effects of minority-carrier injection levels on the transient performance of the HSINFET device are analyzed. The analysis shows that the fast turn-off speed in the HSINFET device occurs because (1) only a small number of minority carriers is injected into the drift region, (2) a current path, provided by the Schottky contact, effectively removes electrons from the drift region during turn-off, and (3) Schottky clamping at the anode is effective during turn-off and prevents the p+ portion of the hybrid anode from significantly injecting holes. Experimental results compared the DC and transient performance of the lateral double-diffused MOS transistor (LDMOST), lateral insulated-gate transistor (LIGT), Schottky injection field-effect (SINFET), and HSINFET are presented
Keywords :
insulated gate field effect transistors; minority carriers; power transistors; semiconductor device models; transients; Schottky clamping; current path; drift region; hybrid Schottky injection FETs; minority-carrier injection levels; n-channel hybrid FET; transient characteristics; turn-off process; two-dimensional numerical simulations; Anodes; Charge carrier processes; Clamps; FETs; Insulation; MOSFETs; Numerical simulation; Performance analysis; Schottky barriers; Transient analysis;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/16.299683
Filename :
299683
Link To Document :
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