Title :
Predicting Method of Leakage Current in Multiple-Gate Amorphous Silicon TFTs for Active-Matrix Electrophoretic Displays
Author :
Yang, Shu ; Jing, Hai
Author_Institution :
Changchun Inst. of Opt., Chinese Acad. of Sci., Changchun
Abstract :
The large off-state drain-source leakage current of the thin-film transistor (TFT) in active-matrix electrophoretic display (AMEPD) may cause severe crosstalk and long pixel refresh time. Multiple-gate amorphous silicon TFT (a-Si TFT) is a common use to overcome this issue. In this paper, we show that the leakage current of multiple-gate a-Si TFT can be computed from the - characteristics of a single TFT by an analytical current model. The predicted leakage currents show good agreement with the expected values in SPICE simulation. This model is also applicable for the multiple-gate a-Si TFTs used in other high voltage driven devices.
Keywords :
SPICE; amorphous semiconductors; display devices; electrophoresis; elemental semiconductors; leakage currents; silicon; thin film transistors; SPICE simulation; Si; active-matrix electrophoretic displays; high voltage driven devices; leakage currents; multiple-gate amorphous silicon TFT; off-state drain-source leakage currents; thin-film transistor; Active-matrix electrophoretic display (AMEPD); amorphous silicon thin-film transistor (a-Si TFT); leakage current; multiple-gate;
Journal_Title :
Display Technology, Journal of
DOI :
10.1109/JDT.2008.921770
